C-S Thin Films Formed by Plasma CVD (Special Issue on Organic Molecular Electronics for the 21st Century)

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概要

• 論文の詳細を見る

• Thin films of carbon (C)-sulfur (S) compound were formed by plasma CVD (PCVD) at the special chemical condition. The reactor has a parallel plate electrode system and was operated at a discharge frequency of 13.56 MHz with using a mixture gas of argon (Ar), methane (CH_4) and SF_6. The deposition was performed on a substrate placed on the grounded electrode. Atomic composition of the film was observed to depend on the gas mixture ratio. The sulfur atom density was increased up to 30% with using a mixture gas at a pressure of 0.1 Torr and at a flow rate of 20, 20 and 50 SCCM for Ar, CH_4 and SF_6, respectively. It was expected that the C-S compounds were deposited under the condition of F atom elimination by forming HF.

• 社団法人電子情報通信学会の論文
• 2000-07-25

著者

• Kashem M

  Nagoya Univ. Nagoya Jpn

• Matsushita Masaki

  Meinan Technical High School

• Morita S

  Nagoya Univ. Nagoya‐shi Jpn

• Matsushita M

  Meinan Technical High School

• KASHEM Md.

  the Department of Electrical Engineering, Electronics and Information Engineering, Nagoya University

• MORITA Shinzo

  the Department of Electrical Engineering, Electronics and Information Engineering, Nagoya University

関連論文

• C-S Thin Films Formed by Plasma CVD (Special Issue on Organic Molecular Electronics for the 21st Century)
• Chemistry of Sulfur Doping Mechanism in Amorphous Carbon by Plasma CVD of Methane
• C-13-1 C-S compound thin film formed by RF plasma CVD with using CH_4, SF_6 and H_2 mixture gas
• 670 nm Laser Light Propagation Characteristics of 10-1μmφ Polystyrene Microsphere Array ; Optics and Quantum Electronics
• The Propagation Characteristic of Laser Light on the Polystyrene Micro-Sphere Array at 10 μm Diameter (Special Issue on Organic Molecular Electronics for the 21st Century)

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