Variable Threshold-Voltage CMOS Technology (Special Issue on Low-power LSIs and Technologies)
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概要
- 論文の詳細を見る
This paper describes a Variable Threshold-voltage CMOS technology (VTCMOS) which controls the threshold voltage (V_<TH>) by means of substrate bias control. Circuit techniques to combine a switch circuit for an active mode and a pump circuit for a standby mode are presented. Design considerations, such as latch-upimmunity and upper limit of reverse substrate bias, are discussed. Experimental results obtained from chips fabricated in a 0.3μm VTCMOS technology are reported. V_<TH> controllability including temperature dependence and influence on short channel effect, power penalty caused by the control circuit, substrate current dependence at low V_<TH>, and substrate noise influence on circuit performance are investigated. A scaling theory is also presented for use in the discussion of future possibilities and problems involved in this technology.
- 社団法人電子情報通信学会の論文
- 2000-11-25
著者
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SAKURAI Takayasu
Center for Collaborative Research,the University of Tokyo
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Kuroda T
Keio Univ. Yokohama‐shi Jpn
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KURODA Tadahiro
the Department of Electrical Engineering, Keio University
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FUJITA Tetsuya
System LSI Research & Development Center, Toshiba Corp.
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HATORI Fumitoshi
System LSI Research & Development Center, Toshiba Corp.
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Hatori Fumitoshi
System Lsi Research & Development Center Toshiba Corp.
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Kuroda Tadahiro
The Department Of Electrical Engineering Keio University
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Fujita T
Toshiba Corp. Kawasaki‐shi Jpn
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Sakurai Takayasu
Center For Collaborative Research And Institute Of Industrial Science The University Of Tokyo
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Sakurai Takayasu
Center For Collaborative Research The Universityof Tokyo
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