Improved Equivalent Circuit Model of GaAs FET Switch for MMIC Phase Shifter Design

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概要

• 論文の詳細を見る

• An improved equivalent circuit model of a GaAs FET switch for MMIC phase shifters is proposed that incorporates distributed lines into a lumped-constant equivalent circuit to account for distributed-line effects. The validity of the proposed model is demonstrated by applying a coupled-wave analysis to the FET switch. Comparison of the measured and the simulated phase angles of the S-parameters shows that the improved model gives much better accuracy than the lumped-constant model. X-band six-bit MMIC phase shifters designed using the improved model are also described.

• 社団法人電子情報通信学会の論文
• 1997-06-25

著者

• Takasu Hideki

  Microwave Solid-state Department Komukai Works Toshiba Corporation

• WATANABE Shigeru

  Microwave Solid-State Department, Komukai Operations, Social Infrastructure Systems Company, Toshiba

• Ohtomo Motoharu

  Department Of Electronics Tokyo Engineering University

• Kamihashi Susumu

  Microwave Solid-state Department Komukai Works Toshiba Corporation

• Watanabe Shigeru

  Microwave Solid-state Department Komukai Operations Social Infrastructure Systems Company Toshiba Co

• Watanabe Shigeru

  Microwave Solid-state Department Komukai Works Toshiba Corporation

関連論文

• A 15-50GHz-BAND GaAs MMIC Variable Attenuator with 20-dB Attenuation Control(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
• A Ultra Broadband SPST GaAs PIN Diode Switch with 30dB Isolation and 1.0dB Insertion Loss
• S-Band MMIC Active Module with Small Phase Variation and Low Insertion Loss for Beamforming Network
• Improved Equivalent Circuit Model of GaAs FET Switch for MMIC Phase Shifter Design

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