Current Sense Amplifiers for Low-Voltage Memories

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概要

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• The principles and design of current sense amplifiers for low-voltage MOS memories are described. The low input impedance of current sense amplifiers is explained using a simple model consisting of negative and positive resistance. A description of the model realized by a common-gate MOS amplifier employing transconductance enhancing techniques is also given. Some current sensing schemes for low-voltage ROM's and/or SRAM's are shown. For SRAM application, a current sensing scheme employing large-gain inverter-type amplifiers is proposed. A test chip including SRAM macrocells was designed and fabricated with 3.3-V 0.5-μm CMOS technology. An SRAM using current sense amplifiers was able to demonstrate that current sensing suppressed bitline delay to half that in conventional current-mirror types. The Current sense amplifier had the same operating limit as the current-mirror type for low supply voltages. The measured operating limit of the SRAM in this work was 1.3-V for threshold voltages of 0.55-V (n-channel) and -0.65-V (p-channel).

• 一般社団法人電子情報通信学会の論文
• 1996-08-25

著者

• Shibata Nobutaro

  NTT LSI Laboratories

関連論文

• A Low-Power Synchronous SRAM Macrocell with Latch-Type Fast Sense Circuits
• Current Sense Amplifiers for Low-Voltage Memories
• High-Performance Memory Macrocells with Row and Column Sliceable Architecture (Special Issue on LSI Memories)

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