An Improved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation (Special Issue on Microwave Devices for Mobile Communications)

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概要

• 論文の詳細を見る

• An improved gate current model of GaAs FET's is presented. A conventional gate current model has been determined only by the forward current and the reverse breakdown characteristics. Consequently, the model fails to fit measured results in the reverse bias range, under which power amplifiers operate. The proposed model improves this problem and shows a great enhancement in accuracy throughout the whole operation range of FET's. The model consists of three diodes and a resistor, which are standard elements implemented in commercially available circuit simulators, and thus it can easily be used for analyzing performances of various FET circuits.

• 一般社団法人電子情報通信学会の論文
• 1996-05-25

著者

• Oda Y

  Komukai Works Toshiba Corporation

• Watanabe Shigeru

  Komukai Works Toshiba Corporation

• ODA Yuji

  Komukai Works, TOSHIBA CORPORATION

関連論文

• An Accurate FET Model for Microwave Nonlinear Circuit Simulation
• An Improved Gate Current Model of GaAs FET's for Nonlinear Circuit Simulation (Special Issue on Microwave Devices for Mobile Communications)

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