Effect of Field-Dependent Diffusion Coefficient in QWITT Diodes

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概要

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• The small-signal negative resistance of QWITT (Quantum Well Transit-Time) diodes is calculated including the effect of field-dependent diffusion coefficient in the frequency range of 10 to 300 GHz. The drift velocity transient effect is also included. The result is compared with those obtained by using constant diffusion coefficients at average electric fields.

• 社団法人電子情報通信学会の論文
• 1993-09-25

著者

• Fukushima M

  Kddi R & D Laboratories Inc.

• Fukushima Makoto

  Faculty of Education, Shimane University

• Fukushima Makoto

  Faculty Of Education Shimane University

• Fukushima Makoto

  Faculty of Agriculture and Life Science, Hirosaki University

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