1.9GHzダイレクトコンバージョン方式による可変減衰器付直交変調器

概要

論文の詳細を見る
We have developed a GaAs direct-conversion 1/4π shifted QPSK modulator IC equipped with variable attenuators for controlling the output power level of the 1.9 GHz Personal Handy Phone (PHS) system. The IC was successfully demonstrated showing state-of-the-art performance with the image rejection ratio of more than 36 dBc at an input low power of -10 dBm in the 1.9 GHz frequency range. By using the "Gate Current Control method by Pull-down FET's" (GCCPF), the equipped attenuators vary the output power from 0 dB to -28 dB by 4 dB step. The IC operates at a 2.7 V supply with the power dissipation of 259 mW. The 2.6 x 4.6 mm^2 chip with about 400 elements was fabricated by a 0.5 mm WN_x-gate BPLDD GaAs MESFET process.
社団法人電子情報通信学会の論文
1996-01-18