スピントンネル接合素子開発の現状と問題点
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概要
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Studies of tunnel magnetoresistance for various kinds of junctions, such as ferromagnet/insulator/ferromagnet trilayer junctions, spin-valve-type junctions, and double-barrier junctions are reviewed. As a means of evaluating tunnel barrier, measurement of local current distribution on using a conducting atomic force microscope is described. On the bases of this measurement, the tunnel resistance dependence of the TMR ratio is discussed. The transport and magnetic properties required for practical devices such as a read head for HDDs and magnetic solid memories are also described.
- 2001-04-01
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