GaAs/GaAsP/Si中の光励起スピン偏極電子流 : ミュオンによる観測

概要

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We propose a new mechanism for probing spin current by using the spin-dependent scattering of conduction electrons at the Muonium (Mu) center resulting from the Pauli exclusion principle. In order to study the feasibility of such a mechanism, we performed a series of μSR experiments in Si wafers covered by strained GaAs epilayers in which the spin-polarized conduction electrons were excited by circularly polarized laser illumination. The Mu spin depolarization showed a significant dependence on the laser wavelength in GaAs/GaAsP/Si and GaAs/Si systems, but not in Si without GaAs epilayers. A slight difference in the triplet-singlet population of Mu depending on the polarization direction of the spin current was also observed at the resonant wavelength of the strained GaAs layer, supporting the proposed mechanism. These results also suggested the injection of spin into Si across the GaAs/GaAsP/Si interfaces.
社団法人日本磁気学会の論文
2001-03-01