Molecular-Beam Epitaxy of AlGaMnAs

概要

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(Al_xGa_<1-x>)_<1-y>Mn_yAs films were grown by molecularbeam epitaxy at various Al compositions. The Al+Ga flux and Mn flux were kept constant. In the case of the growth at the Al composition up to 0.5, homogeneous (Al_xGa_<1-x>)_<1-y>Mn_yAs alloy was grown with zincblende structure, whereas inhomogeneous films with both zincblende (Al_xGa_<1-x>)_<1-y>Mn_yAs and hexagonal MnAs became amorphous thereafter. The Mn composition of the (Al_xGa_<1-x>)_<1-y>Mn_yAs films increased from 0.03 to 0.06 as the Al composition increased from 0 to 0.5.These results indicate that the incorporation rate of Mn atoms into (Al_xGa_<1-x>)_<1-y>Mn_yAs films increases with the increase of the Al composition. The linear relationship was observed between the lattice constant and the Mn composition of the (Al_xGa_<1-x>)_<1-y>Mn_yAs films, independent of the Al composition.
社団法人日本磁気学会の論文
1999-01-20