低抵抗スピントンネル接合

概要

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Two types of spin-dependent tunnel junctions -a different coercivity type and an exchange-biased type- have been demonstrated using in situ natural oxidation of an Al layer to form tunnel barriers. Junctions with dimensions as small as 2×2μm^2 were prepared by photolithography and ion milling. For Fe/Al_2O_3/CoFe junctions, a normalized resistance of 2.4×10^<-6>Ωcm^2 was obtained while maintaining MR ratios of 10% to 12% at room temperature. For Ta/NiFe/FeMn/NiFe/Al_2O_3/NiFe/Ta junctions, MR curves show spin-valve-like characteristics with an exchange bias field of 340 Oe, an MR ratio of 13%, and a normalized resistance of 2×10^5Ωcm^2. The maximum variation of the resistance was ±4% for 4×4μm^2 over a 2-inch wafer. The junctions exhibited a 50% decrease in MR ratio for a bias voltage of 440mV.
社団法人日本磁気学会の論文
1999-01-01