Magnetic Coupling in Epitaxial MnGa/(Mn, Ga, As)/MnGa Trilayers (<Special issue>Maltilayers・Granular)

概要

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We have grown epitaxial ferromagnet/semiconductor/ferromagnet trilayers using the compound magnetic metal δMnGa, and for the first time also a compound semiconductor, GaAs, as spacer layer. At a substrate temperature of 300℃ for the spacer layer growth, we obtained single crystalline films with flat interfaces, but we observed a strong Mn diffusion into the spacer. The magnetic layers are strongly coupled, with a coupling energy comparable to that of metallic spacers. This may be caused by the formation of the diluted magnetic semiconductor Ga_1-_xMn_xAs or the antiferromagnetic metal Mn_2As in the spacer layer (either as a mixture or an intermediate phase). At a spacer layer growth temperature of 250℃, the Mn incorporation is strongly suppressed, but the growth becomes three-dimensional and we have not yet observed interlayer coupling.
社団法人日本磁気学会の論文
1997-04-15