ボロンハイドープ結晶における点欠陥の挙動(<小特集>シリコン結晶成長における酸素輸送と欠陥制御)

概要

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This report involves the point defects behavior in heavily boron-doped Si crystals investigated by the observation of AOP (Anomalous oxygen precipitation) and dislocation clusters. With increasing boron concentration, it becomes difficult to observe the AOP and dislocation clusters. The reason is thought to be that both excess vacancy and interstitial silicon atoms decrease with increasing boron concentration. Various models for point defects behavior in heavily boron-doped Si crystals are reviewed and the shortcomings of each models are discussed.
日本結晶成長学会の論文
2000-01-28