InP結晶の育成と評価

概要

論文の詳細を見る
Recent developments of the InP crystals are reviewed in this paper. In this review, three topics are shown. These are: (l) the reduction of the native defects in InP crystals, (2) the heat treatment effects of InP crystals, and (3) the correlation between the quality of the epitaxial layer and the dislocation in the substrate. The dislocation density of the InP crystals can be reduced by using a simple thermal baffle technology without using sophisticated technique, The existence of the facets on the body is a characteristic of low EPD InP crystals. The S-pits density decreased as the melt holding time before the crystal growth starts increased. The scattering centers investigated by IR light scattering tomography also decreased as the holding time increased. The electrical properties of the InP crystals depend on the annealing conditions. The carrier concentration of the undoped InP crystals decreased after annealing at 650℃. The hole concentration of the heavily Zn-doped InP crystals increased as the cooling rate after the annealing increased. The formation of the hillock defect on the MOCVD epitaxial layer is caused both by dislocations and by substrate orientations. There is a critical misorientation angle for the appearance of the hillock defects.
日本結晶成長学会の論文
1993-06-25