シリコンエピタキシャル膜厚局所分布の数値解析 : エピキタシャル成長IV
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概要
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In order to clarify the formation mechanism of the empirically known silicon epitaxial film profile, this study evaluates the influence of the gas inlet geometry on the transport phenomena in the horizontal single-wafer epitaxi al reactor, using the numerical calculation based on the transport and epitaxy model.
- 日本結晶成長学会の論文
- 2002-07-01