縦型ボート法で成長した大口径低転位密度GaAs単結晶(<小特集>バルク成長分科会特集 : 種結晶(核)からの結晶成長制御について)

概要

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Low-dislocation-density large-diameter GaAs single crystals have been strongly required. We have developed dislocation-free 2-inch to 3-inch Si-doped GaAs single crys-tals, and low-dislocation-density 4-inch to 6-inch semiinsulating GaAs single crystals by vertical boat (VB) method. Such low-dislocation-density large-diameter single crystals could be grown by achievement of the flat solid-liquid interface during the crystal growth. We confirmed that low-residual-strain VB substrate have higher resistance against slip-line generation during MBE process. VB-GaAs crystals showed uniform radial profile of resistivity, due to uniform radial profile of carbon concentration reflecting to the flat solid-liquid interface. Uniformity of micro-resistivity of a VB-GaAS substrate was much better than that of a LEC-GaAS Substrate, which is thought that the concentration of excess arsenic atoms inside the cell of dislocations is higher in VB crystals than in LEC crystals.
日本結晶成長学会の論文
2001-12-25