レーザ結晶化法によるTFT用Si結晶の成長技術(<小特集>バルク成長分科会特集 : 種結晶(核)からの結晶成長制御について)

概要

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High performance silicon (Si) thin film transistors (TFTs) on non-alkali glass substrate will be key to achieving a system on glass (SOG). However, it is very diflicult to form high performance Si devices on glass substrate, because glass is an amorphous materials and its deformation temperature is low: 600℃. Excimer laser crystallization is a useful technique for forming high-quality Si film on glass substrate. However, the obtained Si film is a polycrystalline material with small grains and the reproducibly obtained mobility of TFT is about 150 cm^2/V・s. This value is insufficient to achieve a SOG. We thus need a singlecrystalline-Si film on glass substrate. Since TFTS are positioned at different sites on glass substrate and it is very difficult to form single-crystalline-Si over a wide area, a self-aligned formation of single-crystalline-Si in the channel regions of the TFTS is necessary. In this paper, we propose new Si growth methods to achieve self-aligned formation of single-crystalline-Si in the channel region of TFTS on glass substrate.
日本結晶成長学会の論文
2001-12-25