大口径Si基板上への3C-SiC薄膜エピタキシャル成長 : 招待講演
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概要
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The mechanism of 3C-SiC heteroepitaxial growth on Si(001) substrates has been explored using a hot-wall-type low-pressure reactor, into which SiH_2Cl_2 and C_2H_2 are fed alternately. The growth rate of 3C-SiC was determined from the amount of Si species taken into the surface of the substrate during feeding of SiH_2Cl_2. The grown 3C-SiC film on the Si substrate was found to consist of anti-phase boundaries (APBs) and twins. The annihilation of neighbouring APBS during the SiC growth process brought about a reduction in their densities.
- 日本結晶成長学会の論文
- 1998-07-01
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