窒化物半導体気相エピタキシーの熱力学(<小特集>III族窒化物半導体の結晶成長はどこまで進んだか)

概要

論文の詳細を見る
Thermodynamic studies on metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE) and halide vapor epitaxy (HaVPE) for the growth of nitride semiconductors are reviewed. The equilibrium partial pressures are calculated for the various growth parameters and the required growth conditions are discussed. The phase diagram for the deposition, indicating etching, droplet and growth regions is computed for the growth of binary and ternary nitrides grown by MOVPE and MBE. It is shown that the alloy composition of InGaN grown using MOVPE and the growth rate of GaN grown using HaVPE are thermodynamically controlled. For the MOVPE growth, the origin of the deviation of the InGaN alloy composition from the linear relationship and the existence of a composition unstable region in ternary nitride alloys are discussed. It is also shown that the specific behavior in the growth of nitride semiconductors is attributable to the high growth temperature, the small value of the equilibrium constant of the InN growth reaction, the effect of hydrogen in the growth system, the stability of N_2 produced from NH_3, and the large value of interaction
日本結晶成長学会の論文
1998-06-30