分子線エピタキシー過程におけるサイト相関吸着と原子配列秩序(<特集>「核形成と成長カイネティクス」)

概要

論文の詳細を見る
On the basis of our recent study of atom-sticking coefficients in molecular-beam epitaxy (MBE) of InGaAs pseudobinary alloy grown on GaAs substrate, dynamic atom-incorporation process in MBE is modeled in terms of "site-correlated adsorption probabilities". Under the homogeneous growth condition in which adsorption process is the rate determining one, atom-sticking coefficient can be described by using the site-correlated adsorption probabilities which reflect the local atomic configurations of adsorption sites. The presence of surface steps and surface atom migration have not been taken into account for the sake of simplicity. The adsorption probabilities are determined by intralayer interatomic interaction as well as interlayer interatomic interaction. Intralayer (in plane) interatomic interaction is considered to be anisotropic because of the presence of surface atomic dimer bonds. It has been found that atom-sticking coefficients in heteroepitaxial alloy semiconductor like InGaAs//GaAs(001) are well described by the present theory using site-correlated adsorption probabilities. Moreover, it has been found that the site-correlated adsorption processes cause the formation of atomic long-rage ordering in epitaxial alloy semiconductors.
日本結晶成長学会の論文
1994-03-25