MOCVD法によるInP/Siのヘテロエピタキシャル成長

概要

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The growth of InP films on Si substrates have been studied using metalorganic chemical vapor deposition (MOCVD) technique. A high PH_3/TEI molar ratio (≧150) introduced into the MOCVD reactor is needed to grow In-droplet-free and uniform InP films on Si. An antiphase domain-free (single domain) InP film is obtained on a Si (100) substrate by optimizing substrate preheating temperature. The two-step growth is effective to improve surface morphology of grown films, but is not essential for the single-domain film growth. Defects of 〜1×10^7cm^-2 are revealed in the film by the chemical and the electrochemical etching methods. From the photoluminescence peak energy shift, residual tensile stress in the InP film is estimated to be 〜1×10^9 dyn/cm^2, which is considerably small compared with that in a GaAs film directly grown on Si.
日本結晶成長学会の論文
1987-04-25