Dynamical Properties of Magnetization Reversal of (Ga, Mn) As Layers Studied by MOKE Measurements
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概要
- 論文の詳細を見る
In this work, we report on a study of the magnetization reversal of (Ga, Mn) As/GaAs systems. Four 0.5μm thick Ga_<1-x>Mn_xAs layers (x = 0.017, 0.025, 0.051 and 0.057) grown by low temperature molecular beam epitaxy on GaAs substrate are investigated using magneto-optical Kerr effect (MOKE) . Firstly we analyze static magnetic properties and we identify a four-fold in-plane anisotropy. Using a modified Stoner-Wohlfart model, the magnetocrystalline anisotropy constants are estimated. In last part of this paper we study the dynamic effects on the magnetization reversal when increasing the applied field sweep rate.
- 社団法人日本磁気学会の論文
- 2002-10-01
著者
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Fert A.
Lpmc-insa
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Sadowski J.
Inst. Of Physics Polish Academy Of Sciences
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Hrabovsky D.
Dep. of Physics, Technical Univ. of Ostrava
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Vanelle E.
LPMC-INSA
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Redoules J.
LPMC-INSA
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Kanski J.
Dep. of Experimental Physics, Chalmers Univ. of Technology and Goteborg Univ.
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Ilver L.
Dep. of Experimental Physics, Chalmers Univ. of Technology and Goteborg Univ.
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Kanski J.
Dep. Of Experimental Physics Chalmers Univ. Of Technology And Goteborg Univ.
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Hrabovsky D.
Dep. Of Physics Technical Univ. Of Ostrava
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Ilver L.
Dep. Of Experimental Physics Chalmers Univ. Of Technology And Goteborg Univ.