F151 熱輻射で加熱したシリコンウェハの温度分布計算

概要

論文の詳細を見る
The most important process of semi-conductor production is oxide-precipitation and annealing. And Rapid Thermal Processing (RTP) system draws attention of the most advanced semi-conductor manufactures. In the case of RTP, only 1(one) silicon wafer is subject to the heat treatment inside the furnace each time. The heaters are placed at the upper most area of the furnace, which creates the desirable temperature gradient along the furnace wall, and makes it easy to control the temperature of the silicon wafer by shifting the position inside the furnace. The silicon wafer is surrounded by an edge ring, which is made of silicon carbide. There is a narrow gap between the inner surface of the edge ring and outer surface of the silicon wafer, at which a shaded region is created against radiated heat energy from the furnace wall. This paper shows the level of accuracy of nonlinear FEM technique by comparing with the experimental results
社団法人日本機械学会の論文
2002-11-06