838 セラミックス被膜の応力深さ分布測定

概要

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Depth profiles of the residual stress in TiCN films coated on either TiC or TiN interfacial layer were compared in order to examine a possibility of controlling residual stress near the interface. 0.3 micron thick interfacial layer and then 10 microns thick TiCN film were coated on WC-Co substrate by chemical vapour deposition. A constant penetration depth method with synchrotron radiation available at SPring-8 was used to obtain the stress depth profiles. A difference in the stress depth profiles between the two TiCN films was observed though the method was under development. The TiCN film on the TiC layer showed lower residual stress than that of the TiCN on the TiN near the interface. The difference is ascribable to the fact that the thermal expansion coefficient of TiC is between TiCN and WC-Co though that of TiN is larger than both TiCN and WC-Co.
一般社団法人日本機械学会の論文
2003-08-05