Residual Stress in PZT Thin Film Determined by Indentation Fracture Method(Thin Films)

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概要

• 論文の詳細を見る

• In the investigation, the piezoelectric thin film Pb(Zr_xTi_<1-x>)O_3(PZT) was prepared by a pulse laser deposition method. The properties of PZT films were strongly dependent on substrate temperature and oxygen pressures. The residual stress in piezoelectric thin film was tested by indentation fracture method. The relation of properties such as microstructures, piezoelectric response with residual stress was investigated. A theoretical model for the formation of residual stress is proposed. The model is based on the combined effects of the difference of thermal mismatch between substrate and thin film, the phase transformation and the different of lattice constant between thin film and substrate.

• 一般社団法人日本機械学会の論文
• 2001-10-20

著者

• Zheng X.j.

  Institute Of Fundamental Mechanics And Material Engineering Xiangtan University

• ZHOU Y.C.

  Institute of Fundamental Mechanics and Material Engineering, Xiangtan University

• YANG Z.Y.

  Institute of Fundamental Mechanics and Material Engineering, Xiangtan University

• HASHIDA T.

  Fracture Research Institute, Tohoku University

• LI J.Y.

  Department of Mechanical Engineering, California Institute of Technology

• Li J.y.

  Department Of Mechanical Engineering California Institute Of Technology

• Yang Z.y.

  Institute Of Fundamental Mechanics And Material Engineering Xiangtan University

• Zhou Y.c.

  Institute Of Fundamental Mechanics And Material Engineering Xiangtan University:fracture Research In

関連論文

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