ダイナミックイオンミキシング法によるTi-N系薄膜の形成とその機械的性質

概要

論文の詳細を見る
Ti-N thin films were formed on unheated Si (100) substrate with evaporation of Ti by electron beam and simultaneous bombardment of N ion beam in the range of 1〜40 keV. The influence of N ion acceleration energies and the content ratios (N/Ti) on microstructrues and phases was investigated by x-ray diffraction (XRD), Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). The XRD spectra revealed the formation regions of the single phases and the mixture phases for α-Ti, the stoichometric compounds TiN and Ti_2N at the various ion acceleration energies. The mechanical properties such as hardness, elastic modulus, adhesive strength and friction coefficient were also investigated. Nano-indentation studies showed that the hardness and the elastic moduli for each phase increased with increasing mixing layer thickness related to the ion acceleration energy. The single phase TiN and Ti_2N films prepared at higher ion energy showed the excellent mechanical properties in the hardness and adhesive strength. Relationship between other mechanical properties of the obtained films and their phases also discussed.
社団法人日本機械学会の論文
1998-02-25