シリコン結晶の塑性変形の転位動力学的モデル化

概要

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A dislocation dynamical model for plastic deformation including increase and decrease in mobile dislocation density and increase in immobile dislocation density is proposed. The model takes account of dynamical internal stress due to mobile dislocations and statical internal stress (work hardening) due to immobile dislocations. Stress (applied stress and effective stress)-strain curves of silicon single crystals, through upper and lower yield points up to steady states of deformation, are calculated numerically by the model for various strain rates. The results of calculation agree well with the experiments by Yonenaga and Sumino [Phys. Stat. Solidi (a), 50 (1978), 685] except for upper yield points. Calculated dependence of lower yield stresses and of effective stress-strain curves after lower yield points on the initial density of dislocations also agrees with their experiments.
一般社団法人日本機械学会の論文
1991-05-25