バイアスを印加したプラズマCVDによるステンレスへのSiCコーティング

概要

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SiC coating on stainless steel by reaction with SiH_4 and CH_4 was studied using plasma-assisted CVD in a triode bell jar reactor, in which a third electrode was used as the sample holder and rf bias potential was applied. Generally, it is thought that if an ionic species is introduced on coating surface, ablation of fragile parts may result ; however when the bias potential was increased to -380V, the growth rate again increased. The breakdown voltage of coated films increased in the order of applied bias potential of -200, -300, -100, 0 and -380V, and the order was the same results of the chemical anti-corrosive test. It was found that the optical band gap and residual carbon content are increased with increasing methane feed rate. Application of rf bias potential also leads to monotonic increase of the optical band gap except for 0 and -100V. It was found that there is good correlation between the applied rf potential and the breakdown voltage and the results of the anti-corrosive test except for applied bias potential of 0 and -100V.
社団法人日本セラミックス協会の論文
1995-07-01