プラズマCVD法によるTiO_2薄膜の低温合成

概要

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Thin films of TiO_2 were prepared from gas mixtures of TiCl_4 and O_2 using rf glow discharge. TiO_2 films were grown on glass, Si, Ti and MgO substrates at temperatures as low as 200℃ by applying an rf power of 10 W, although no film was deposited without glow discharge even at 470℃ except on the Ti substrate. As the rf power was increased, the deposition rate increased and attained the maximum value which was more than five times as large as the initial deposition rate, but decreased in applying excessive rf powers. TiO_2 crystals of anatase phase were grown at temperatures lower than those for growth of rutile phase. The temperature at which the rutile phase formed depended on the substrate material. Rutile films which were grown on MgO (100) at temperatures above 300℃ exhibited highly [110]-oriented crystal growth. For these films, the surface morphology and the degree of the orientation of polycrystallites in the [110] direction depended on the rf power.
社団法人日本セラミックス協会の論文
1993-05-01