V_2O_5-Bi_2O_3-TeO_2系ガラスの電気伝導

概要

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The dc conductivity of V_2O_5-Bi_2O_3-TeO_2 glasses prepared by press-quenching was studied at temperatures from RT to 473 K and the mechanism of conduction was discussed. The glasses were found to be n-type semiconductors and gave the conductivities of 6.6×10^<-6>-3.0×10^<-4> S・cm^<-1> at 473 K, activation energies of 0.42-0.53 eV for V_2O_5=30-69 mol%. The conduction was confirmed to be due to small polaron hopping and was adiabatic for V_2O_5>50 mol% and non-adiabatic for V_2O_5<50 mol%. The polaron band width ranged from J=0.02 to 0.11 eV, depending highly upon the V-V spacing. The carrier mobility was evaluated to be 10^<-7>-10^<-5>cm^2V^<-1>s^<-1> which varied extensively with V_2O_5 concentration. The estimated carrier density was 0.8-1.3×10^<20>cm^<3>, almost independent of V_2O_5 content in the glasses.
社団法人日本セラミックス協会の論文
1993-03-01