ホットフィラメントCVDを用いた窒化ケイ素基板上へのダイヤモンド合成

概要

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Diamond films have been deposited by hot filament chemical vapor deposition on hot-pressed silicon nitride substrates using a mixture of hydrogen and methane with a CH_4/H_2 volume ratio fixed to 0.5%. Scratching with diamond paste of the as-received substrates was necessary to obtain high nucleation densities(10^8-10^9 cm^<-2>)in the 750-1000℃ deposition temperature range, while, on scratched substrates, the nucleation density decreased at 1050℃. The diamond deposition rate has its maximum at around 850-900℃. The film texture was{111}<100>at the low deposition temperatures, while became{111}{100}<110>at temperatures higher than 750℃. A careful analysis of the Raman spectra allowed us to identify the best deposition conditions for the growth of high quality diamond. Silicon nitride as a substrate for diamond CVD is better than cemented tungsten carbide due to the lower level of residual stress and to the higher phase purity of the coating.
社団法人日本セラミックス協会の論文
1998-12-01