AlCl_3・NH_3-H_2系気相反応によるAlN膜の合成

概要

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Aluminium nitride (AlN) films were prepared by the chemical vapor deposition in the AlCl_3・NH_3-H_2 system under an atmospheric pressure. The effects of the synthetic conditions on the deposition rate and the morphology of AlN films were discussed. The deposition rate decreased with increasing distance (X) between the upstream end of the graphite supporting Al2O_3 substrates and Al2O_3 substrates and with decreasing deposition temperature (T_d). The effect of AlCl_3-NH_3 concentration (C_A) on the deposition rate was very complicated. Generally, the deposition rate increased with increasing C_A but decreased between C_Λ=2.5 and 3.4 vol%. The morphology of AlN crystals in the films deposited at 800℃ depended on the X value fine (X≒1 cm), columnar (X≒2 cm), needle-like (X≒3 cm), and then whisker-like crystals (X≒4 cm). With decreasing T_d or increasing C_A, the smooth surface AlN films turned rough.
社団法人日本セラミックス協会の論文
1990-10-01