高エネルギー電子照射によるシリコンカーバイド中への金の強制注入とその状態分析

概要

論文の詳細を見る
Bilayer films of Au (target atom)/α-SiC (substrate) were irradiated with 2 MeV electrons in an ultra-high voltage electron microscope. By irradiation, gold atoms in the upper layer were implanted into the SiC substrate. Changes in the microstructures and bonding state associated with the implantation were studied by ultra-high voltage electron microscopy and scanning Auger valence electron spectroscopy, respectively. The results obtained are as follows ; (1) Irradiation with 2 MeV electrons first induces a crystalline-to-amorphous transition in α-SiC. (2) Gold atoms which have been knocked-off from the gold layer by the collision with 2 MeV electrons are recoil-implanted into the resultant amorphous SiC. (3) The implanted gold makes preferential bonding with silicon having dangling bonds, and new bonding states are formed between them. (4) During continued irradiation, the gold atoms repeat displacement towards the beam direction, which is induced by the collision with electrons and subsequent bonding with silicon atoms having dangling bonds. The repetition results in the deep implantation of gold into the SiC substrate
社団法人日本セラミックス協会の論文
1990-02-01