ゾル-ゲル法により作製したLaNiO_3(100)/CeO_2(100)/Si(100)ヘテロ構造の構造解析

概要

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LaNiO_3(100)/CeO_2(100)/Si(100) as a metal/insulator/semiconductor heterostructure was prepared by a sol-gel method with a spin-coating technique. The structure of each oxide layer was investigated by out-of-plane and in-plane X-ray diffraction analyses. The high degree of {100}-orientation of the CeO_2 layers was obtained with higher heat treatment temperatures, 600-700℃. The in-plane measurements revealed that the CeO_2 layers had a nonepitaxial structure in spite of the deposition on the Si(100) substrates with good lattice compatibility. The LaNiO_3 layers on the CeO_2(100)/Si(100) also exhibited the preferential {100}-orientation without epitaxy. The crystallinity of the {100}-oriented grains in the LaNiO_3 layers was higher than that in the CeO_2 layers. The occurrence of the orientation was discussed in view of the interfacial energies at each interface.
社団法人日本セラミックス協会の論文
2001-09-01