ボロン系化合物を添加したα-SiCセラミックスの熱電物性

概要

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The effects of boron compound additive on the thermoelectric properties of α-SiC ceramics were studied. Porous SiC ceramics with 57-62% relative density were fabricated by sintering the pressed α-SiC powder compacts with B, B_4C, and BN at 2000-2100℃ for 3h in Ar and/or N_2 atmosphere. The sintered bodies were analyzed by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM). Lattice parameter measurements revealed incorporation of a certain amount of added B into the SiC lattice and negligible phase transformation during sintering. The Seebeck coefficient, electrical conductivity and thermal conductivity were measured at 600-900℃ in Ar and/or vacuum atmosphere. The kind of additives, the amount of addition and sintering atmosphere had significant effects on the thermoelectric properties. 0n the whole, the excess addition had a harmful influence upon electrical conductivity. The thermoelectric figure of merit of B-doped SiC was lower than that of n-type SiC.
社団法人日本セラミックス協会の論文
2004-02-01