Quasiparticle Energy Calculations on II(Zn)-VI(O, S, Se) and III(Al, Ga)-V(N) Semiconductors in the Wurtzite Structure : Condensed Matter: Electronic Properties, etc.

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概要

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• Quasiparticle energies of AlN, GaN, ZnO, ZnS and ZnSe in the wurtzite structure have been calculated by the GW approximation with a full random phase approximation dielectric matrix instead of using plasmon pole approximation. The linear muffin tin orbital basis was used for this work and the d orbials of the Zn and Ga atoms were treated as valence state explicitly in every case. The calculated quasiparticle band gaps and the semicore levels by the GW method are in good agreements with the experimental values. The electronic energy levels of these five systems calculated using the local density, GW and Hartree-Fock approximations were compared systematically.

• 社団法人日本物理学会の論文
• 2000-07-15

著者

• Aryasetiawan Ferdi

  Theory Research Group Joint Research Center For Atom Technology-angstrom Technology Partnership

• OSHIKIRI Mitsutake

  Physical Properties Division, National Research Institute for Metals

• Oshikiri Mitsutake

  Tsukuba Magnet Laboratories National Research Institute For Metals

• Oshikiri Mitsutake

  Physical Properties Division National Research Institute For Metals:max-planck-institut Fur Festkorp

関連論文

• Quasiparticle Energy Calculations on II(Zn)-VI(O, S, Se) and III(Al, Ga)-V(N) Semiconductors in the Wurtzite Structure : Condensed Matter: Electronic Properties, etc.
• High-Field Pulsed Magnet Wound of Cu-Ag Alloy Wire

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