Studies on the Boundary between Etched and Ground Regions of Ge and Si Single Crystal Surfaces by X-Ray Diffraction Topography

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概要

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• The anomalous boundary effect similar to these found by Fukushima in guartz were studied by x-ray diffraction topography methods in Ge and Si single crystals. Both Laue and Bragg cases are examined using CuK_α and AgK_α radiations for various net planes. Results are reasonably explained by assuming a strain gradient perpendicular to the boundary as the previous workers. It was shown that the Borrmann effect as well as the ordinary extinction effect are useful in point-by-point examination of lattice distortions in nearly perfect single crystals.

• 社団法人日本物理学会の論文
• 1961-04-05

著者

• Ishii Zensho

  Electrical Laboratory

関連論文

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• X-ray Observation of the Strain Field in Germanium Single Crystals with the Use of the Anomalous Transmission
• Observation of Layer Structure in Dislocation Free Silicon Crystals with the Use of X-ray Anomalous Transmission
• Studies on the Boundary between Etched and Ground Regions of Ge and Si Single Crystal Surfaces by X-Ray Diffraction Topography
• Silicocarbon—Thermal Decomposition Product of Silicone Resin

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