Anomalous Diffusion at the Interface of Thin Bimetallic Film of Bi and Sb

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概要

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• The intermetallic diffusion was studied by electron and X-ray diffraction and electrical resistance measurement on vacuum deposited thin bimetallic films of Bi and Sb. The formation of triple-layer, which consisted of two outer layers of Bi and Sb and the intermediate layer of solid solution of the definite composition, was observed in the course of heating in vacuum. Such an anomalous diffusion could not be expected from a usual diffusion couple of bulk specimens. It was found that the degree of such a triple-layer formation depended on the kind and deposition rates of secondary deposits, and the maximum thickness of the intermediate layer attaind by diffusion was confined to a certain limiting value. The defectiveness of films was deduced from electrical resistance measurements, the results of which were related to the triple-layer formation.

• 社団法人日本物理学会の論文
• 1961-04-05

著者

• Yoshida Toshiho

  Institute Of Physics Kyoto Prefectural University Of Medicine

• Fujiki Yoshibumi

  Institute Of Physics Kyoto Prefectural Medical College

• Suganuma Ryoji

  Institute of Physics, Kyoto Prefectural University of Medicine

• Suganuma R.

  Institute of Physics, Kyoto Prefectural University of Medicine

関連論文

• Effect of Deposited Metals on the Crystallization Temperature of Amorphous Germanium Film
• A New Device for measuring Thickness of Evaporated Metal Film by Use of X-ray Interference Fringes
• Study on Vacuum Deposition of Metals, I : On the Formation of Alloys by Successive Deposition of Constituent Metal Vapours in Vacuum
• Study on Vacuum Deposition of Metals : II. On the Change with Aging Time in Thickness and Resistivity of Vacuum Deposited Gold Film
• Anomalous Diffusion at the Interface of Thin Bimetallic Film of Bi and Sb

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