Current-Voltage Characteristics of Plastically Deformed Germanium P-N Junctions
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概要
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The influence of dislocations which were introduced into germanium crystal by plastic deformation on the current-voltage characteristics of the p-n junction was investigated experimentally using grown junction diode bars. It was revealed that the theory of carrier generation and recombination in a p-n junction was applicable to explain the junction characteristics. When the width of the transition layer in a p-n junction was as great as about 200 micron, the anomalous characteristics were observed after plastic deformation twisting. Some considerations were made about the p-n-p-n structure which was produced in the original p-n junction region plastic deformation.
- 社団法人日本物理学会の論文
- 1961-11-05