Characteristics of Germanium p-n Junction with Irregular Structure

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概要

• 論文の詳細を見る

• A transistor was made with an imperfect emitter junction having an irregular structure made by applying a very thin indium layer on an n type germanium pellet and a comparatively perfect collector junction having regular structure. The current flowing into the imperfect emitter was divided into various components, and the voltage-current characteristics of each component was studied. Among these, a particular attention was paid on the electron current component which flows through the minute area of the m-n junction existing at the irregular part of the p-n junction. From these studies the phenomena of the voltage-current characteristics of the emitter differing greatly from the Shockly Equation, the abnormally strong current dependency of the current amplification factor of the transistor, and the floating-potential of the emitter are explained.

• 社団法人日本物理学会の論文
• 1960-07-05

著者

• Tomono Masami

  Central Research Laboratory Hitachi Ltd.

関連論文

• Regrowth of Germanium from Molten Indium or Lead
• Regrowth of Germanium Single Crystal from Indium Melt
• Direct Viewing of Imperfections in Germanium p-n Junction
• Characteristics of Germanium p-n Junction with Irregular Structure

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