Adsorption and Surface Potential of Semi-conductors. Part II. Surface Vacancies and its Reaction with Oxygen on ZnS

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The surface potential and its change with illumination for the (110) cleavage surface of zincblende have been measured. It was found that electron trap centers were created near the surface of the crystal, when the crystal was heat-treated in vacuum, and these traps were diminished by the reaction with oxygen. The traps are attributed to sulphur vacancies which are formed by evaporation of sulphur component by the following reasons; (1)the higher the temperature of heattreatment in vacuum, the number of traps becomes the larger and (2)after heattreatment at 350℃for 4 hours in vacuum, the surface becomes charged positively. It is concluded that oxygen reacts with these traps making the surface to be charged negatively. An overall change of surface potential in the range between the initial and saturated adsorption agrees fairly well with the initial heat of adsorption observed, as expected theoretically.
社団法人日本物理学会の論文
1956-04-05