Temperature-Dependent Electronic Structure of VO_2 in the Insulating Phase
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概要
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We have studied the temperature-dependent electronic structure of VO_2 in the insulating phase. The V 3d and O 2p bands become broader and their band edges are shifted toward the Fermi level (E_F) with increasing temperature. The V 2p and O 1s core-level spectra also show a similar temperature dependence. These observations combined with optical spectra indicate that the position of E_F relative to the conduction-band minimum is fixed and that the band gap changes mainly below E_F. We also point out the possibility that electron-phonon interaction plays an important role in the temperature dependence of spectra in the insulating phase and may drive the metal-insulator transition.
- 社団法人日本物理学会の論文
- 2002-03-15
著者
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FUJIMORI Atsushi
Department of Physics and Department of Complexity Science and Engineering, University of Tokyo
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OKAZAKI Kiyohiko
Institute of Physical and Chemical Research (Riken)
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Okazaki Kozo
Department Of Physics University Of Tokyo
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ONODA Masashige
Institute for Molecular Science, Okazaki National Research Institutes
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Fujimori Atsushi
Department Of Physics University Of Tokyo:department Of Complexity Science And Engineering Universit
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Fujimori Atsushi
Department Of Complexity Science And Engineering And Department Of Physics University Of Tokyo
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Okazaki K
Department Of Physics University Of Tokyo
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Okazaki Kozo
Department Of Physics And Department Of Complexity Science And Engineering University Of Tokyo
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Onoda Masashige
Institute For Molecular Science Okazaki National Research Institutes
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Fujimori Atsushi
Department Of Physics University Of Tokyo:department Of Complexity Science And Engineering Universit
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