Electronic Raman Scattering of Photoexcited Electrons in Germanium
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概要
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We measured electronic Raman scattering originating from photoexcited L valley electrons inundoped, p-type (N? : 10" cm '), and n-type (Y. : 10" cm ') germanium crystals at latticetemperature from RT to 76 K when stimulated by 1.58-eV laser light. From analysis of thepower dependence of Raman intensity in the three samples and comparison of the spectral shapewith reported data on heavily doped n-type crystal, the origin of this scattering is ascribed toelectrons in the L valley. We analyzed this Raman scattering by using Ipatova's theory, andfound that phonon assisted intervalley scattering was dominant in the temperature dependenceof the width (FWHM of modified Lorentzian) of the electronic Raman scattering spectra. Wealso succeeded in reproducing the temperature dependence of scattering intensity taking intoaccount the temperature dependent diffusion constant of electrons,
- 社団法人日本物理学会の論文
- 1996-02-15
著者
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OHTAKE Hideyuki
Institute for Molecular Science (IMS)
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SUEMOTO Tohru
Institute for Solid State Physics, The University of Tokyo
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Tanaka Koichiro
Institute for Solid State Physics, The University of Tokyo
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Tsukamoto Takeyo
Institute For Molecular Science
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Tsukamoto T
Sci. Univ. Tokyo Tokyo
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Suemoto Tohru
Institute For Solid State Physics The University Of Tokyo
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Ohtake Hideyuki
Institute For Solid State Physics University Of Tokyo
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Tanaka Koichiro
Institute For Solid State Physics University Of Tokyo
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Ohtake Hideyuki
Institute for Molecular Science
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SUEMOTO Tohru
Institute for Solid State Physics,University of Tokyo
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