Band Structure of Si(111)√<3>×√<3>:Ag Studied by a Mixed-Basis Pseudopotential Method

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概要

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• Energy band calculations are performed on a series of model structures for Sill 11)JX J :Ag by the use of a norm-conserving pseudopotential combined with a mixedbasis scheme for wave functions and other quantities. Considerations are presentedon the basis of the calcu1atec[ results, especially as to the energy position of the d-likestates due to Ag atoms, and the energy dispersion of the sttrface state bands in themain gap region of bulk Si. Satisfactory agreement with photoemission data has beenobtained as to the former point, but has not been obtained as to the latter for anystructure proposed so far in experimental structure analyses.

• 社団法人日本物理学会の論文
• 1986-01-15

著者

• Nagayoshi Hideo

  Department Of Material Physics Faculty Of Engineering Science Osaka University

関連論文

• Angle-Resolved Ultraviolet Photoelectron Spectroscopy Study of the Si(111)√×√-Bi Surface
• Combined OPW-TB Method for the Band Calculation of Layer-Type Crystals. II. : The Band Structure of Graphite
• Surface States of the Si(111)-Adatom Systems
• Band Theory of Graphite. : I. Formalism of a New Method of Calculation and the Fermi Surface of Graphite
• Band Structure of Si(111)√×√:Ag Studied by a Mixed-Basis Pseudopotential Method

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