Temperature Dependence of EPR Spectrum from VO^<2+> Ions in (NH_4)_2SO_4
スポンサーリンク
概要
- 論文の詳細を見る
Temperature dependence of EPR spectra from polar VO" probes doped inferroelectric (NH.).S0. crystal was studied in the range between l 10 K and 3O0K.Impurity ton, VO", takes substitutionally the position of two NIIJ ion vacanciesso as to satisfy the local charge neutrality. Three kinds of VO" sites in thecrystal are identified. One is VO" substituted for II-II pair of NH: ions, anotheris I-IT and the other is I-I.When the temperature is lowered, VO" molecular axes arc slightly displacedin a different manner, respectively. From this fact it is concluded that the localelectric field is reflected in the VO" displacement. The analyses of the polarangles to the crystal c-axis for VO" in II-II and I-I sites show quite similarprofile with anomalous temperature dependence of polarization observed byUnruh. The two-sublattice model for (NH.).S0. is supported by the presentstudy.
- 社団法人日本物理学会の論文
- 1979-10-15
著者
-
FURUKAWA Kazuo
Department of Physics, Faculty of Science, Kagoshima Unviersity
-
Kawano Takamasa
Department Of Physics Faculty Of Science Kagashima University
-
Furukawa Kazuo
Department Of Physics Faculty Of Science Kagoshima University
-
Furukawa Kazuo
Department Of Applied Physics Faculty Of Science Fukuoka University
関連論文
- Crystal Structure of (NH_4)_3H(SO_4)_2 in Phase I
- Crystal Structure of (NH_4)_3H(SeO_4)_2 in Phase IV
- A New Phase Transition of (NH_4)_3H(SO_4)_2 at 190℃
- Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
- Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma
- Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
- Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma
- Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma
- Electron Spin Resonance of SeO_4^ and SeO_3^- Radicals in KDP Single Crystal
- Electron Spin Resonance of Radiation Damage Centers in NH_4H_2PO_4 Single Crystal Doped with K_2SeO_4
- ESR Study of Radiation Damage Centers in ADP-KDA Mixed Crystals
- Electron Paramagnetic Resonance of Cr^ Ions in Antiferroelectric ADP Crystals
- Electron Paramagnetic Resonanse of Cr^ in NH_4H_2PO_4
- Temperature Dependence of EPR Spectrum from VO^ Ions in (NH_4)_2SO_4
- ESR Study of Radiation Damage Centers in ADP : K_2SeO_4 Mixed Crystals
- Primary Cutaneous Mucinous Carcinoma Initially Diagnosed as Metastatic Adenocarcinoma
- Anomalous AC Electric Conductivity in (NH_4)_3H (SeO_4)_2
- Anomalous Thermal Hysteresis of Dielectric Constant of Tungsten Trioxide WO_3
- Effects of Uniaxial Stress and Electric Field on Paramagnetic Spectra of Cr^ in KH_2PO_4
- Discontinuous Narrowing of VO^Electron Spin Resonance Linewidth in(NH_4)_3H(SeO_4)_2 Induced by Superionic Phase Transition
- ESR Study of KDP:K_2SeO_4 Mixed Crystals