C-Axis Resistivity of Graphite in Connection with Stacking Faults

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概要

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• For studying the electron scattering by acoustic phonons and stacking faults, the electrical resistivity of graphite is calculated. Main results of the present calculation are as follows: The acoustic phonon scattering gives rise to the ratio of resistivity $\rho_{c}/\rho_{a}{\sim}10^{2}$, where $\rho_{c}$ indicates the $c$-axis resistivity and $\rho_{a}$ the basal plane resistivity. $\rho_{c}$ increases monotonically with the concentration of stacking faults, while $\rho_{a}$ is independent of it. The stacking fault associated with the basal dislocation ribbon gives the most effective electron scattering among various types of faults. The ratio $\rho_{c}/\rho_{a}$ becomes $10^{4}$ at room temperature when the mean distance between the stacking faults is assumed to be 200Å.

• 社団法人日本物理学会の論文
• 1976-02-15

著者

• Ono Shusuke

  Wireless Research Laboratory Matsushita Electric Ind. Co. Ltd.

関連論文

• Hall Effect in Graphite and Its Relation to the Trigonal Warping of the Energy Bands.II.Theoretical
• Trigonal Warping of the Bands and Hall Effect in Graphite
• C-Axis Resistivity of Graphite in Connection with Stacking Faults

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