Thermal Instability of the Growth Interface in the Horizontal Solidification of GaAs

概要

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Through experimentation on a zone-melting growth of a GaAs single crystal, the origin of both weak and strong surface oscillations of a melt has been investigated. The effect of increasing the temperature gradient for a constant rate of solidification is to increase the amplitude of these oscillations. The theoretical consideration analogous to both Cole-Winegard and Brice treatments on a GaAs melt has indicated a possible existence of a strong convective fluid flow in the melt with high temperature gradient about 50℃/cm at the growth interface. It is concluded that the strong convective fluid flow arising from the horizontal temperature gradient in a melt is one of the probable sources of these instabilities. The optimum growth conditions for the stable growth of a GaAs single crystal using the zone-melting method has been determined.
社団法人日本物理学会の論文
1970-09-05