Structural Study of Amorphous SiGe Alloy Films Using Extended X-Ray Absorption Fine Structure
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概要
- 論文の詳細を見る
Extended X-ray absorptiota fine structure (EXAFS) measurements were made on a-SiGe and a-SiGe:H prepared by rf-diode sputtering and glow discharge decomposi-lion along with crystalline SiGe, c-SiGe, prepared by annealing the amorphoussamples. The Fourier transforms of Ge K-edge E)<AFS of c-SiGe prepared by anneal-ing sputtered a-SiGe, a-SiGe:H and glow discharge a-SiGe:II resemble each other inshape. The Fourier transforms of Ge K-edge EX,6rFS of sputtered and glow dischargea-SiGe:H films are also quite similar to each other. On investigating EXAFS and X-ray absorption near edge structure, XANES, of c-SiGe, a-SiGe and a-SiGe:H, it isfound that the disorder of the network structure in the SiGe alloy system increases in the order of c-SiGe, a-SiGe and a-SiGe:H.
- 社団法人日本物理学会の論文
- 1987-07-15
著者
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Nomura Masao
Institute Of Physics College Of Arts And Sciences University Of Tokyo
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WAKAGI Masatoshi
Hitachi Research Laboratory, Hitachi, Ltd.
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NOMURA Masaharu
Photon Factory, Institute of Materials Structure Science, KEK
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Nomura Mitsuhiro
Institute Of Physics University Of Tsukuba:(present Address)fuji Electric Co. Ltd.
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Wakagi Masatoshi
Hitachi Research Laboratory Hitachi Ltd.
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Ohno Toshiyuki
Hitachi Research Laboratory Hitachi Ltd
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CHIGASAKI Mitsuo
Hitachi Research Laboratory,Hitachi Ltd
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Chigasaki Mitsuo
Hitachi Research Laboratory Hitachi Ltd.
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Nomura Masaharu
Photon Factory High Energy Accelerator Research Organization (kek)
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Wakagi Masatoshi
Hitachi Research Laboratory,Hitachi,Ltd.
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Chigasaki Mitsuo
Hitachi Research Laboratory,Hitachi,Ltd.
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