Simulation of Dislocation Configuration in Rare Gas Crystals
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概要
- 論文の詳細を見る
A simulation has been made for a screw dislocation in argon and xenon modelcrystals with various sizes. The number of atom rows in the crystal was 360-1400, andthe Lennard-Jones (12-6) interatomic potential truncated at the third neighbors wasadopted. The ordinary relaxation method was used to obtain the stable configurationof atoms in the crystal. It was found that the dislocation split into two Shockley parfiats, and the configuration of the partials depended on the boundary condition of thecrystal surface. A method of modified boundary condition was proposed to controlthe effect of the surface. The split dislocations were able to stably exist when theirseparation was in a definite range, which was well understccod by considering thebalance of three forces: the interaction force between partials, the force due to stack-ing fault, and the image force from the crystal surface. By taking the limiting value ofthe sej5aration distance for the crystal of infinite size, the stacking fault energy was es-timated to be o.v++o.to and 1.0980.14erg/cm' for argon artd xenon.
- 社団法人日本物理学会の論文
- 1987-03-15
著者
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Hiki Yosio
Faculty Of Engineering Ibaraki University
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Hiki Yosio
Faculty Of Science Tokyo Institute Of Technology
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KOGURE Yoshiaki
Faculty of Science,Tokyo Institute of Technology
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TSUCHIYA Tadayoshi
Faculty of Science,Tokyo Institute of Technology
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Tsuchiya T
Univ. Tsukuba Tsukuba Jpn
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Kogure Yoshiaki
Faculty Of Science And Engineering Teikyo University Of Science & Technology
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Hiki Yosio
Faculty of Science,Tokyo Institute of Technology
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