Properties of Indium Film Deposited at Liquid Nitrogen Temperature
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概要
- 論文の詳細を見る
Irreversible resistivities of as-deposited indium films during annealing process weremeasured. Using Vand's theory, an activation energy of defect, E, and the initiallattice distortion energy function, F.(E), were evaluated. The spectrum of F.(E)showed two peaks, one at the activation energy f....=0.30eV, and the other atE.....=0.45 eV. The dependence of the activation energies on the film thickness werenot observed. But the values of F.(E.....) and F.(E....) were dependent on the filmthickness. It is suggested that the peak at E.... is related to the stress introduced dur-ing the annealing process.
- 社団法人日本物理学会の論文
- 1987-01-15
著者
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Ohtsuka M
Tokyo Inst. Technology Tokyo
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Ohtsuka Mieko
Experimental Center For Very Low Temperature And Energy Technique Tokyo Institute Of Technology
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Kobayashi Takamitsu
Department Of Applied Physics Faculty Of Science Tokyo Institute Of Technology
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Ohtsuka M
Experimental Center For Very Low Temperature And Energy Technique Tokyo Institute Of Technology
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Kojima Shigeki
Department Of Applied Physics Faculty Of Science Tokyo Institute Of Technology
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OHTSUKA Meiko
Experimental Center for Very Low Temperature and Energy Technique,Tokyo Institute of Technology
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